| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which optionally adjusts the distribution of plasma density in a processing chamber and inhibits the rise of the costs.SOLUTION: A plasma processing apparatus 10 includes: an ICP antenna 13 that is disposed in the exterior of a chamber 11 so as to face a placement base 12 and supplies high-frequency power to the interior of the chamber 11; and a window member 14 that forms a part of a ceiling part of the chamber 11, is disposed between the placement base 12 and the ICP antenna 13, and is formed by a conductor. The window member 14 has a number of transmission units 19 allowing the high-frequency power to be transmitted in a thickness direction of the wind member 14. Each of the transmission unit 19 has a slit 24 that penetrates through the window member 14 in the thickness direction and has an adjustable width. |
