发明名称 A METHOD FOR MANUFACTURING SIC POWDERS WITH HIGH PURITY
摘要 Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.
申请公布号 KR20130104447(A) 申请公布日期 2013.09.25
申请号 KR20120025947 申请日期 2012.03.14
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY;LG INNOTEK CO., LTD. 发明人 PARK, SANG WHAN;HAN, KYOUNG SOP;YUN, SUNG HO;YANG, JIN OH;CHO, GYOUNG SUN;YOUM, MI RAE;JO, YUNG CHUL
分类号 C01B31/36;C01B33/12 主分类号 C01B31/36
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