SEMICONDUCTOR DEVICE FABRICATION METHOD

摘要

The present invention is a method for fabricating a semiconductor device including the steps of: a first silicon nitride film 12 having a refractive index of 2.2 or higher on a semiconductor layer 11 made of a GaN- or InP-based semiconductor; forming, on the first silicon nitride film, a second silicon nitride film 14 having a refractive index lower than that of the first silicon nitride; forming a source electrode 16 and a drain electrode 18 in areas in which the semiconductor layer 11 is exposed; annealing the source electrode 16 and the drain electrode 18 in a state in which the first silicon nitride film 12 and the second silicon nitride film 14 are formed; and forming a gate electrode on the semiconductor layer 11 between the source electrode and the drain electrode.