SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve hole injection efficiency by including a hole diffusion unit which efficiently diffuses holes. CONSTITUTION: An n-type semiconductor layer and a p-type semiconductor layer are composed of nitride semiconductors. An active layer is arranged between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a p-type clad layer and a p-type contact layer. A hole diffusion unit is arranged on the p-type semiconductor layer and includes a first layer (105a) and a second layer (105b). The first layer and the second layer are alternatively arranged twice or more times.