发明名称 Polycrystalline silicon reactor
摘要 A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
申请公布号 US8540818(B2) 申请公布日期 2013.09.24
申请号 US20100662597 申请日期 2010.04.26
申请人 KIRII SEIICHI;KITAGAWA TERUHISA;MITSUBISHI MATERIALS CORPORATION 发明人 KIRII SEIICHI;KITAGAWA TERUHISA
分类号 C23C16/458;C23C16/06;C23C16/46;C23F1/00;H01L21/306 主分类号 C23C16/458
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