发明名称 |
Polycrystalline silicon reactor |
摘要 |
A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
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申请公布号 |
US8540818(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US20100662597 |
申请日期 |
2010.04.26 |
申请人 |
KIRII SEIICHI;KITAGAWA TERUHISA;MITSUBISHI MATERIALS CORPORATION |
发明人 |
KIRII SEIICHI;KITAGAWA TERUHISA |
分类号 |
C23C16/458;C23C16/06;C23C16/46;C23F1/00;H01L21/306 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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