| 摘要 |
<p>This film forming device is provided with an electrode (20) formed from an electrode part (21) having magnets (22) and target material (23), and a shutter mechanism that includes a pair of shutters (31) is disposed beneath the target material (23) in the electrode (20). Each shutter (31) is supported by an arm (39) that swings centered on a pivot shaft (15). The shutter mechanism can switch between a state that covers the target material in a state of contact with the target material and a state in which the target material is exposed. During film formation by sputtering, the shutters are opened, and during film formation by plasma CVD the target material is covered by the shutters. This film forming device can efficiently carry out film forming by sputtering and film forming by plasma CVD in a single chamber without electrodes becoming contaminated.</p> |
