METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE EPITAXIAL WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem that, in some cases, stress is generated by the dope concentration difference of nitrogen between a silicon carbide substrate and an epitaxial growth layer, and crystal defects are generated by the stress, and current leakage defects are generated at high density.SOLUTION: An epitaxial growth layer added with nitrogen of low concentration and having a thickness of T is formed on a 4H type silicon carbide semiconductor substrate which has a plane inclined in a predetermined direction from (0001) plane on the surface and grooves formed at an interval D in the direction perpendicular to a prescribed direction, and is added with nitrogen of high concentration. At that time, the D and the T satisfy a relation: D×T≤6×10μm.