| 摘要 |
According to one embodiment, an SiC semiconductor device including a p-type 4H-SiC region formed on at least part of a surface portion of an SiC substrate, a first gate insulating film formed on the 4H-SiC region and formed of a 3C-SiC thin film having p-type dopant introduced therein, a second gate insulating film formed on the first gate insulating film, and a gate electrode formed on the second gate insulating film.
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