发明名称 REDUCED OXIDES HAVING LARGE THERMOELECTRIC ZT VALUES
摘要 Doped and partially-reduced oxide (e.g., SrTiO3-based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as titanium carbide, titanium nitride, or titanium boride can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.
申请公布号 US2013240801(A1) 申请公布日期 2013.09.19
申请号 US201313891581 申请日期 2013.05.10
申请人 CORNING INCORPORATED 发明人 BACKHAUS-RICOULT MONIKA;MOORE LISA ANNE;SMITH CHARLENE MARIE;ST. CLAIR TODD PARRISH
分类号 H01B1/02 主分类号 H01B1/02
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