VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE

摘要

A variable resistance nonvolatile storage device includes: variable resistance elements (Rij) which transition reversibly between a low resistance state and a high resistance state in response to the application of electric signals of different polarities; and current control elements (Dij) in which a first current is larger than a second current, where the first current is defined as the current that flows when applying a voltage having a first value that is an arbitrary value with an absolute value greater than zero and lower than a prescribed voltage value and having a first polarity, and the second current is defined as the current that flows when applying a voltage having an absolute value of the first value and having a second polarity different from the first polarity. The variable resistance elements (Rij) and the current control elements (Dij) are connected in series such that the polarity of the voltage applied to the current control elements (Dij) is the second polarity when the variable resistance elements (Rij) are to transition from the low resistance state to the high resistance state.