| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching device in which ammonium fluorosilicate on a substrate can be removed by a simple configuration.SOLUTION: The etching device includes an etching section for etching a silicon oxide film on a substrate at 100°C or less, by using NHgas and HF gas in a chamber. The etching section includes a gas supply section disposed at a position facing a substrate support base and supplying the NHgas and HF gas to the substrate support base side, a window of transparent member disposed, as a part of the wall surface of the chamber, at a position closer to the outer peripheral side than the gas supply section in the chamber, and a heating section disposed near the window and heating inside the chamber. The heating section sublimates ammonium fluorosilicate adhering onto the substrate by etching, by heating inside the chamber after etching a silicon oxide film on the substrate. |
