发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, ELECTRONIC EQUIPMENT, AND SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device with a highly-reliable wiring layer formed with high precision.SOLUTION: A semiconductor device 10 includes: a resin layer 11; a metal film 12 provided on a surface of the resin layer 11; an insulating film 13 provided on a surface of the metal film 12; and a semiconductor element 14A provided on a recess 11a of the resin layer 11 and a semiconductor element 14B provided on a recess 11b of the resin layer 11. A wiring layer 15 with a conductive part 15a is provided on the semiconductor element 14A, the semiconductor element 14B, and the insulating film 13. Providing the metal film 12 and the insulating film 13 on the resin layer 11 reduces reflectance difference in a surface on which the wiring layer 15 is provided, thereby improving precision and reliability of the wiring layer 15 formed using a photolithography technique or the like.
申请公布号 JP2013187434(A) 申请公布日期 2013.09.19
申请号 JP20120052467 申请日期 2012.03.09
申请人 FUJITSU LTD 发明人 IKEDA JUNYA
分类号 H01L23/12;H01L21/56;H01L25/04;H01L25/18 主分类号 H01L23/12
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