| 摘要 |
PROBLEM TO BE SOLVED: To provide a CBRAM having good rectification characteristics and high durability of switching characteristics.SOLUTION: A nonvolatile semiconductor memory device according to an embodiment comprises a word line WL, a first electrode 3, an ion diffusion layer 2, a second electrode 1, and a bit line BL. The word line is composed of a conductive material extending in a first direction. The first electrode is provided on and electrically connected to the word line. The ion diffusion layer is highly resistive and is provided on and electrically connected to the first electrode. The second electrode is provided on the ion diffusion layer. When a positive voltage is applied to the first electrode, the second electrode supplies a metal into the ion diffusion layer. The bit line is provided on and electrically connected to the second electrode, and composed of a conductive material extending in a second direction orthogonal to the first direction. The second electrode is composed of a metal supplied into the ion diffusion layer. The ion diffusion layer includes oxygen whose concentration is higher on a word line side than on a bit line side. |
