| 摘要 |
PROBLEM TO BE SOLVED: To provide a NOR type flash memory cell in which FN efficiency and charge trapping efficiency can be improved.SOLUTION: A NOR type flash memory cell 300 includes a first transistor M1, a second transistor M2, and a third transistor M3. The first transistor includes a control terminal, a first terminal, and a second terminal. The control terminal is used for receiving a word line signal WL, and the first terminal is used for receiving a bit line signal BL. A gate of the first transistor includes a silicon rich nitride layer and an oxide layer. The silicon rich nitride layer is embedded in the oxide layer. The control terminal of the second transistor is used for receiving a reading signal. The second terminal is used for transferring a source line signal SL, on the basis of the read signal. A third transistor is connected between the first transistor and a bit line in which the bit-line signal flows, and the control terminal receives an intermediate control signal. |
