发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices. |
申请公布号 |
US2013244356(A1) |
申请公布日期 |
2013.09.19 |
申请号 |
US201313801903 |
申请日期 |
2013.03.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNG JOON;JANG TAE SUNG;WOO JONG GUN;RYU YUNG HO;KIM TAE HUN;SONG SANG YEOB |
分类号 |
H01L33/00;H01L33/60 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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