发明名称 SOLID-STATE IMAGE PICKUP DEVICE
摘要 A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
申请公布号 US2013241024(A1) 申请公布日期 2013.09.19
申请号 US201313872694 申请日期 2013.04.29
申请人 SONY CORPORATION 发明人 EZAKI TAKAYUKI;HIRAYAMA TERUO
分类号 H01L31/02 主分类号 H01L31/02
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