发明名称 SEMICONDUCTOR MEMORY DEVICE FOR CONTROLLING WRITE RECOVERY TIME
摘要 A semiconductor memory device includes a CAS latency mode detecting means for outputting a CAS latency control signal in response to a CAS latency mode; and an auto-precharge control means for controlling timing of an auto-precharge operation in response to the CAS latency control signal.
申请公布号 US2013242679(A1) 申请公布日期 2013.09.19
申请号 US201313892840 申请日期 2013.05.13
申请人 658868 N.B. INC. 发明人 IM JAE-HYUK;LEE WOON-BOK
分类号 G11C7/12;G11C11/40;G11C7/10;G11C7/22;G11C8/18;G11C29/02 主分类号 G11C7/12
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