<p>A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).</p>
申请公布号
WO2013138573(A1)
申请公布日期
2013.09.19
申请号
WO2013US31263
申请日期
2013.03.14
申请人
SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人
SHATALOV, MAXIM, S;GASKA, REMIGIJUS;YANG, JINWEI;SHUR, MICHAEL;DOBRINSKY, ALEXANDER