发明名称 METHOD FOR FORMING RESIST PATTERN AND RADIATION-SENSITIVE RESIN COMPOSITION
摘要 <p>A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer and a radiation-sensitive acid generator. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group.</p>
申请公布号 KR20130102596(A) 申请公布日期 2013.09.17
申请号 KR20137009433 申请日期 2011.09.05
申请人 JSR CORPORATION 发明人 SAKAKIBARA HIROKAZU;FURUKAWA TAIICHI;KIMURA REIKO;HORI MASAFUMI
分类号 G03F7/26;G03F7/039;G03F7/32;H01L21/027 主分类号 G03F7/26
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