| 摘要 |
PROBLEM TO BE SOLVED: To provide a design and a manufacturing technology of a semiconductor device capable of optimizing the design and process of each product to materialize a flatness after a CMP process. SOLUTION: In the design and the manufacturing technology of a thin film device in which a film is formed and a CMP is effected under conditions depending on design information to manufacture through an inspection, a wafer after the CMP is measured in a film thickness in detail, and the design and process are altered based on actually measured film thickness data to optimize. As the result of the actual measurement, when variations of the film thickness are large, a layout of a circuit pattern, an area rate or layout of a dummy pattern, and a layout, a film forming amount and a polishing amount of a reverse pattern are optimized to materialize the flatness after the CMP process. COPYRIGHT: (C)2004,JPO&NCIPI
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