发明名称 |
Process for selectively patterning a magnetic film structure |
摘要 |
Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.
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申请公布号 |
US8535953(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US201213350174 |
申请日期 |
2012.01.13 |
申请人 |
ABRAHAM DAVID W.;ASSEFA SOLOMON;O'SULLIVAN EUGENE J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAHAM DAVID W.;ASSEFA SOLOMON;O'SULLIVAN EUGENE J. |
分类号 |
H01L21/00;H01L21/20;H01L21/302;H01L21/461 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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