发明名称 |
Carbon implant for workfunction adjustment in replacement gate transistor |
摘要 |
A transistor includes a semiconductor body having a channel formed in the semiconductor body; a high dielectric constant gate insulator layer disposed over a surface of an upper portion of the channel; and a gate metal layer disposed over the high dielectric constant gate insulator layer. The channel contains Carbon implanted through the gate metal layer, the high dielectric constant gate insulator layer and the surface to form in the upper portion of the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the transistor.
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申请公布号 |
US8536627(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US201213623162 |
申请日期 |
2012.09.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUO DECHAO;HAN SHU-JEN;WONG KEITH KWONG HON;YUAN JUN |
分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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