发明名称 DEVICE MANUFACTURING METHOD AND DONOR SUBSTRATE FOR TRANSFER
摘要 PROBLEM TO BE SOLVED: To provide a device manufacturing method capable of suppressing transfer unevenness on a material transferred by a laser transfer method.SOLUTION: In a device manufacturing method, a barrier wall for dividing a region into a plurality of sections and a photothermal conversion layer are provided on one side of a support substrate 11. A transfer donor substrate 10 on which transfer materials 14a-14c are arranged in respective sections is irradiated with laser beam so that the transfer materials 14a-14c are transferred onto a device substrate 20. It includes a step in which the transfer materials 14a-14c of the transfer donor substrate 10 are made to face a transfer surface 20a of the device substrate 20, so that a barrier wall 13 abuts with the device substrate 20, a step in which a presser plate 30 through which laser beam penetrates is arranged on a rear surface side of the support substrate 11, and a step in which laser beam is radiated to the rear surface side through the presser plate 30. In at least regions corresponding to a plurality of sections, a gap having at least the length five times the wavelength of laser beam is provided between the presser plate 30 and the support substrate 11.
申请公布号 JP2013182787(A) 申请公布日期 2013.09.12
申请号 JP20120045829 申请日期 2012.03.01
申请人 TORAY IND INC 发明人 NISHIMURA SEIICHIRO;TANIMURA YASUAKI;FUJIMORI SHIGEO
分类号 H05B33/10;H01L51/50 主分类号 H05B33/10
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