POROUS SEMICONDUCTOR ELECTRODE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide: a porous semiconductor electrode that enables a porous semiconductor thin film to have a constant film thickness without depending on viscosity control; and a method of manufacturing the porous semiconductor electrode.SOLUTION: In order to manufacture a porous semiconductor electrode 13 by forming a porous semiconductor thin film 12 on a surface of a porous semiconductor substrate 11 having fine pores extending through the front and rear thereof, a pressurized fluid G is brought into contact with the rear surface of the substrate 11 so that the pressure in the fine pores becomes higher than that in the atmosphere on the surface of the substrate 11 so as to increase the pressure in the fine pores. In this state, porous semiconductor slurry S that becomes the thin film 12 is applied to the surface of the substrate 11.