发明名称 CRYSTALLINE ALUMINUM CARBIDE THIN FILM, SEMICONDUCTOR SUBSTRATE HAVING THE ALUMINUM CARBIDE THIN FILM FORMED THEREON AND METHOD OF FABRICATING THE SAME
摘要 Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate.
申请公布号 US2013237037(A1) 申请公布日期 2013.09.12
申请号 US201313871497 申请日期 2013.04.26
申请人 SEOUL OPTO DEVICE CO., LTD;SEOUL OPTO DEVICE CO., LTD. 发明人 SAKAI SHIRO
分类号 H01L21/02 主分类号 H01L21/02
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