发明名称 |
CRYSTALLINE ALUMINUM CARBIDE THIN FILM, SEMICONDUCTOR SUBSTRATE HAVING THE ALUMINUM CARBIDE THIN FILM FORMED THEREON AND METHOD OF FABRICATING THE SAME |
摘要 |
Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate. |
申请公布号 |
US2013237037(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201313871497 |
申请日期 |
2013.04.26 |
申请人 |
SEOUL OPTO DEVICE CO., LTD;SEOUL OPTO DEVICE CO., LTD. |
发明人 |
SAKAI SHIRO |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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