发明名称 |
A MOLYBDENUM OXIDE PHOTOTRANSISTOR AND METHOD OF SYNTHESIS THEREOF |
摘要 |
A method of synthesizing a molybdenum oxide phototransistor, the method comprising: placing a foil of molybdenum in a furnace; placing a sheet of muscovite (K(Al2)(Si3Al)O10(OH)2) at a predetermined distance from the foil of molybdenum in the furnace; controlling airflow into the furnace to provide sufficient oxygen for crystalline growth of potassium-intercalated molybdenum oxide (KxMoO3) while maintaining a preset temperature of the furnace for a time period to produce the KxMoO3 nanowire; transferring the KxMoO3 nanowire onto a substrate; and forming a covering of electrodes on the nanowire to produce the molybdenum oxide phototransistor. |
申请公布号 |
WO2013133770(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
WO2013SG00096 |
申请日期 |
2013.03.08 |
申请人 |
NANYANG TECHNOLOGICAL UNIVERSITY;NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
SUN, CHEN;MHAISALKAR, SUBODHN GAUTAM;LU, JUMPENG;SOW, CHORNG HAUR |
分类号 |
H01L29/775;B82Y20/00;C01G39/02;G02B1/02;H01L31/10;H01L31/18 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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地址 |
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