| 摘要 |
<p>PURPOSE: A method for forming a semiconductor gas sensor is provided to prevent heterogeneous oxides by maximally widening the specific surface area of a heterogeneous oxide sensing layer. CONSTITUTION: A semiconductor gas sensor includes a board (100), a plurality of heaters, and an electrode (110). A first thin film material is deposited on an active area of the board. A heterogeneous oxide sensing layer is formed by combining a first thin film (200a) with a second thin film (200b) through thermal oxidation after a second thin film material is deposited on the first thin film material. The first thin film is formed by repeating a thick protrusion and a thin groove. The first thin film is SnO2 and the second thin film is CuO.</p> |
