发明名称 DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER
摘要 <p>Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.</p>
申请公布号 EP2635513(A2) 申请公布日期 2013.09.11
申请号 EP20110838708 申请日期 2011.11.01
申请人 INTEVAC, INC. 发明人 CHO, YOUNG, KYU
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项
地址