SILICON WAFER ETCHING METHOD USING COMPENSATION STRUCTURE AND ENERGY HARVESTER MANUFACTURING METHOD USING THE SAME

摘要

PURPOSE: A method for etching a silicon wafer using a compensation structure and a method for manufacturing an energy harvester using the same are provided to easily form desired fine structures by using an etching compensation structure. CONSTITUTION: A structure compensation mask is designed based on an etch rate (S110). A silicon wafer is etched by using the structure compensation mask (S120). An etch rate and an undercut are set. An etching process is simulated according to the etch rate and the undercut. The structure compensation mask is designed based on simulation results. [Reference numerals] (S110) Mask designing stage where a structure compensation mask with a compensation unit is designed based on an etch rate based on the fuzzy theory; (S120) Etching stage where a silicon wafer is etched by using the structure compensation mask