FINFET DESIGN WITH LDD EXTENSIONS

摘要

PURPOSE: A FINFET design using an LDD extension is provided to maximize a channel width by forming a dielectric layer on a gate electrode dielectric layer. CONSTITUTION: A fin (120) is made of pure silicon. A semiconductor substrate is patterned by the fin. A gate dielectric layer (140) is formed in the upper part of the fin and a separation structure (130). A gate electrode layer (150) is formed on the gate dielectric layer. A gate electrode layer includes a conductive material.