发明名称 Method for manufacturing a microelectronic device and a microelectronic device thus manufactured
摘要 The invention pertains to a method for manufacturing a microelectronic device on a substrate comprising at least one first electrical component and one second electrical component distributed respectively in first and second levels stacked one on top of the other on the substrate, this method comprising: the manufacture of at least one first arm and one second arm of different lengths, each of these arms directly and mechanically linking an electrical pad to a fixed anchoring point on the substrate, and the electrical pad is made inside the first level and then shifted, prior to the electrical connection of the second component, to a position of connection wherein the upper face of the electrical pad is in contact with the interior of the second level parallel to the substrate.
申请公布号 US8530276(B2) 申请公布日期 2013.09.10
申请号 US201113093912 申请日期 2011.04.26
申请人 HILT THIERRY;BOUTRY HERVE;FRANIATTE REMY;MOREAU STEPHANE;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 HILT THIERRY;BOUTRY HERVE;FRANIATTE REMY;MOREAU STEPHANE
分类号 H01L21/00 主分类号 H01L21/00
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