发明名称 Semiconductor memory device
摘要 A memory device and a method of controlling the memory device are provided, comprising: generating commands at a memory controller; counting a number of commands in response to a clock signal; storing the commands and the count numbers corresponding to the commands; transmitting to a memory device the commands, the count number of the commands, and data; receiving at the memory device the commands, the count number of the commands, and data sent from the memory controller; counting at the memory device the number of commands received in response to the clock signal; storing at the memory device the count number of commands received; and transmitting the count number of the commands received to the memory controller, wherein said transmitting the count number of the command to the memory controller is performed upon indication of an error condition.
申请公布号 US8533535(B2) 申请公布日期 2013.09.10
申请号 US201113005156 申请日期 2011.01.12
申请人 OH TAE-YOUG;SAMSUNG ELECTRONICS CO., LTD. 发明人 OH TAE-YOUG
分类号 G06F11/00 主分类号 G06F11/00
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