发明名称 |
Magnetoresistive element, method of manufacturing the same, and magnetic memory |
摘要 |
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
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申请公布号 |
US8530887(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113050692 |
申请日期 |
2011.03.17 |
申请人 |
KITAGAWA EIJI;KAI TADASHI;DAIBOU TADAOMI;HASHIMOTO YUTAKA;YODA HIROAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITAGAWA EIJI;KAI TADASHI;DAIBOU TADAOMI;HASHIMOTO YUTAKA;YODA HIROAKI |
分类号 |
H01L27/15 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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