发明名称 |
Method for controlling threshold voltage of semiconductor element |
摘要 |
A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.
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申请公布号 |
US8530246(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US20090992073 |
申请日期 |
2009.05.11 |
申请人 |
OFUJI MASATO;TAKAI YASUYOSHI;KAWASAKI TAKEHIKO;KANEKO NORIO;HAYASHI RYO;CANON KABUSHIKI KAISHA |
发明人 |
OFUJI MASATO;TAKAI YASUYOSHI;KAWASAKI TAKEHIKO;KANEKO NORIO;HAYASHI RYO |
分类号 |
H01L21/00;G01R31/26;H01L21/331;H01L21/336 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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