发明名称 |
Integration of non-noble DRAM electrode |
摘要 |
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment. |
申请公布号 |
US8530348(B1) |
申请公布日期 |
2013.09.10 |
申请号 |
US201213482573 |
申请日期 |
2012.05.29 |
申请人 |
MALHOTRA SANDRA G.;CHEN HANHONG;DEWEERD WIM Y.;HAYWOOD EDWARD L.;ODE HIROYUKI;RICHARDSON GERALD;INTERMOLECULAR, INC.;ELPIDA MEMORY, INC. |
发明人 |
MALHOTRA SANDRA G.;CHEN HANHONG;DEWEERD WIM Y.;HAYWOOD EDWARD L.;ODE HIROYUKI;RICHARDSON GERALD |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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