发明名称 TRANSISTOR, MANUFACTURING METHOD OF THE SAME, DISPLAY DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a transistor having high electrical characteristics, a manufacturing method of the transistor, a display device and an electronic apparatus.SOLUTION: A transistor manufacturing method comprises: a step of forming an oxide semiconductor film having a channel region and a gate electrode opposite to the channel region on a substrate; and a step of forming an insulation film which covers the gate electrode and the oxide semiconductor film. Immersion of moisture from the insulation film to the oxide semiconductor film is inhibited by the substrate.
申请公布号 JP2013179141(A) 申请公布日期 2013.09.09
申请号 JP20120041561 申请日期 2012.02.28
申请人 SONY CORP 发明人 MOROSAWA NARIHIRO
分类号 H01L21/336;H01L29/786;H01L51/50;H05B33/14 主分类号 H01L21/336
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