发明名称 |
DEFECT DETECTION METHOD, DEFECT DETECTION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a defect detection method capable of detecting defects even when the amount of current that is required to detect the defects of a semiconductor substrate is restricted.SOLUTION: A defect detection method includes the steps of: obtaining an infrared image that indicates the temperature distribution of a semiconductor substrate in which voltage is being applied to a plurality of wirings; locating a heated semiconductor element; and determining a wiring being electrically connected with the heated semiconductor element out of the plurality of wirings as a defective wiring having a short circuit defect, on the basis of information on an electrical connection relation between pre-identified locations of the plurality of semiconductor elements, and the plurality of wirings. |
申请公布号 |
JP2013178176(A) |
申请公布日期 |
2013.09.09 |
申请号 |
JP20120042509 |
申请日期 |
2012.02.28 |
申请人 |
SHARP CORP |
发明人 |
NAKAJIMA TAKAHIRO |
分类号 |
G01N25/72;G01B11/00;G02F1/13 |
主分类号 |
G01N25/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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