发明名称 DEFECT DETECTION METHOD, DEFECT DETECTION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a defect detection method capable of detecting defects even when the amount of current that is required to detect the defects of a semiconductor substrate is restricted.SOLUTION: A defect detection method includes the steps of: obtaining an infrared image that indicates the temperature distribution of a semiconductor substrate in which voltage is being applied to a plurality of wirings; locating a heated semiconductor element; and determining a wiring being electrically connected with the heated semiconductor element out of the plurality of wirings as a defective wiring having a short circuit defect, on the basis of information on an electrical connection relation between pre-identified locations of the plurality of semiconductor elements, and the plurality of wirings.
申请公布号 JP2013178176(A) 申请公布日期 2013.09.09
申请号 JP20120042509 申请日期 2012.02.28
申请人 SHARP CORP 发明人 NAKAJIMA TAKAHIRO
分类号 G01N25/72;G01B11/00;G02F1/13 主分类号 G01N25/72
代理机构 代理人
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