发明名称 METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL DIAMOND
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal diamond using a plasma CVD method capable of maintaining generated plasma stably, and growing a single crystal diamond inexpensively.SOLUTION: In a method for producing a single crystal diamond making a single crystal diamond grow on a substrate of one electrode by supplying raw material gas and by using plasma generated between electrodes, the position of the plasma is adjusted by a magnetic field formed by a magnetic field generation means. An apparatus for producing a single crystal diamond is also provided.
申请公布号 JP2013177270(A) 申请公布日期 2013.09.09
申请号 JP20120041821 申请日期 2012.02.28
申请人 KURITA SEISAKUSHO:KK 发明人 NISHIMURA YOSHIMI;SHIBATA MASAAKI;KAKIYA SHINICHI
分类号 C30B29/04;C01B31/06;C23C16/27;C23C16/515;C30B30/04 主分类号 C30B29/04
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