发明名称 |
METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL DIAMOND |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a single crystal diamond using a plasma CVD method capable of maintaining generated plasma stably, and growing a single crystal diamond inexpensively.SOLUTION: In a method for producing a single crystal diamond making a single crystal diamond grow on a substrate of one electrode by supplying raw material gas and by using plasma generated between electrodes, the position of the plasma is adjusted by a magnetic field formed by a magnetic field generation means. An apparatus for producing a single crystal diamond is also provided. |
申请公布号 |
JP2013177270(A) |
申请公布日期 |
2013.09.09 |
申请号 |
JP20120041821 |
申请日期 |
2012.02.28 |
申请人 |
KURITA SEISAKUSHO:KK |
发明人 |
NISHIMURA YOSHIMI;SHIBATA MASAAKI;KAKIYA SHINICHI |
分类号 |
C30B29/04;C01B31/06;C23C16/27;C23C16/515;C30B30/04 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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