SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which stabilizes electrical characteristics of a transistor using an oxide semiconductor film.SOLUTION: A semiconductor device comprises: a gate electrode layer provided on a substrate; a gate insulation film provided on the gate electrode layer; an oxide semiconductor film provided on the gate insulation film; a drain electrode layer provided on the oxide semiconductor film so as to overlap the gate electrode; and a source electrode layer provided so as to cover a part of an outer peripheral end of the oxide semiconductor film. An outer peripheral end of the drain electrode layer is located inside an outer peripheral end of the gate electrode layer.