发明名称 |
SYMMETRIC PLASMA PROCESS CHAMBER |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus with improved electrical, gas-flow, and thermal symmetry for plasma uniformity control.SOLUTION: An embodiment comprises: a chamber lid assembly 110 and a chamber body 142 which enclose a processing region 102; and a substrate support assembly 160 disposed in the chamber body 142. The chamber lid assembly 110 comprises: an upper electrode 112 having a central manifold 120 configured to distribute processing gas into the processing region 102 and having one or more outer manifolds 122 configured to distribute the processing gas into the processing region 102; and a ring manifold 128 coupled to the one or more outer manifolds 122 via a plurality of gas tubes 129 arranged symmetrically about a central axis CA of the substrate support assembly 160. |
申请公布号 |
JP2013179055(A) |
申请公布日期 |
2013.09.09 |
申请号 |
JP20130079053 |
申请日期 |
2013.04.05 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
JAMES D CARDUCCI;HAMID TABASSOLI;BALAKRISHNA AJIT;CHEN ZHIGANG;NGUYEN ANDREW;DOUGLAS A BUCHBERGER JR;KARTIK RAMASWAMY;RAUF SHAHID;COLLINS KENNETH S |
分类号 |
H05H1/46;C23C16/509;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|