发明名称 SYMMETRIC PLASMA PROCESS CHAMBER
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus with improved electrical, gas-flow, and thermal symmetry for plasma uniformity control.SOLUTION: An embodiment comprises: a chamber lid assembly 110 and a chamber body 142 which enclose a processing region 102; and a substrate support assembly 160 disposed in the chamber body 142. The chamber lid assembly 110 comprises: an upper electrode 112 having a central manifold 120 configured to distribute processing gas into the processing region 102 and having one or more outer manifolds 122 configured to distribute the processing gas into the processing region 102; and a ring manifold 128 coupled to the one or more outer manifolds 122 via a plurality of gas tubes 129 arranged symmetrically about a central axis CA of the substrate support assembly 160.
申请公布号 JP2013179055(A) 申请公布日期 2013.09.09
申请号 JP20130079053 申请日期 2013.04.05
申请人 APPLIED MATERIALS INC 发明人 JAMES D CARDUCCI;HAMID TABASSOLI;BALAKRISHNA AJIT;CHEN ZHIGANG;NGUYEN ANDREW;DOUGLAS A BUCHBERGER JR;KARTIK RAMASWAMY;RAUF SHAHID;COLLINS KENNETH S
分类号 H05H1/46;C23C16/509;H01L21/3065 主分类号 H05H1/46
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