发明名称 |
GATE-ALL AROUND SEMICONDUCTOR NANOWIRE FET'S ON BULK SEMICONDUCTOR WAFERS |
摘要 |
<p>Non-planar semiconductor devices are provided that include at least one semiconductor nanowire 18" suspended above a semiconductor oxide layer (26) that is present on a first portion (100) of a bulk semiconductor substrate. An end segment of the at least one semiconductor nanowire is attached to a first semiconductor pad region (20A) and another end segment of the at least one semiconductor nanowire is attached to a second semiconductor pad region (20B). The first and second pad regions are located above and are in direct contact with a second portion (102) of the bulk semiconductor substrate which is vertically offsets from the first portion (100). The structure further includes a gate (27) surrounding a central portion (18C) of the at least one semiconductor nanowire, a source region (40, 50A) located on a first side of the gate, and a drain region (40', 50B) located on a second side of the gate which is opposite the first side of the gate.</p> |
申请公布号 |
WO2013130298(A1) |
申请公布日期 |
2013.09.06 |
申请号 |
WO2013US26639 |
申请日期 |
2013.02.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SLEIGHT, JEFFREY, W.;CHANG, JOSEPHINE, B.;LAUER, ISAAC;NARASIMHA, SHREESH |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|