| 摘要 |
PURPOSE: A nano-structure in which an AZP buffer layer is formed and a manufacturing method thereof are provided to vertically grow the nano-wire in a fixed thickness. CONSTITUTION: A manufacturing method of a nano-structure in which an AZO buffer layer is formed comprises the following steps: (S1) forming an AZO (Al doped ZnO) buffer layer is formed on a transparent electrode(102); (S2) growing nano-wires(300) by providing a precursor including a first metal and oxygen on the AZO buffer layer; and (S3) arranging upper electrodes on the nano-wire. The AZO buffer layer is formed by depositing ZnO and Al2O3 by turns using an ALD (Atomic Layer Deposition) method. The AZO buffer layer is formed in the thickness of 10-100 nano meters. In the step (S2), the precursor is provided at the flow rate of 5-10 micro mol/min for 20-40 minutes. The flow ratio of the precursor to oxygen in the step (S2) is 1:180-1:200. [Reference numerals] (S1) Forming an AZO buffer layer on a transparent electrode; (S2) Growing nano-wires on the AZO buffer layer; (S3) Arranging upper electrodes on the nano-wire |
