TIN SULFIDE PRECURSOR, THIN FILM USING TIN SULFIDE PRECURSOR, AND PREPARATION METHOD THEREFOR

摘要

The present invention relates to a tin sulfide precursor and a thin film prepared using the precursor, the tin sulfide precursor comprising: Sn, a central atom; a first atom group covalently bonded to the central atom; and a second atom group coordinate-covalently bonded to the central atom, wherein the first atom group is S, the second atom group is one or more selected from a group consisting of S and N, and an atom belonging to the first atom group satisfies condition (1) or (2), wherein (1) the atoms belonging to the first atom group are connected to each other to form a cyclic structure, or (2) the atom belonging to the first atom group and the atom belonging to the second atom group are connected to each other to form a cyclic structure, and the atoms belonging to the first atom group and the second atom group are independently substituted or unsubstituted with a C1-C4 alkyl group. A high-purity tin sulfide thin film can be prepared, and the prepared thin film can be used as various electronic materials.