| 摘要 |
The purpose of the present invention is to manufacture a semiconductor layer containing a Group I-II-IV-VI compound, using a simple method. The complex compound for manufacturing the semiconductor layer is expressed by structural formula (1). (In the formula, M1 represents a Group I-B element. M2 represents a Group IV-B element. R1 through R3 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted cycloalkyl group, or substituted or unsubstituted heterocyclic group. Herein, 2 or more of R1 through R3 can be coupled to form a saturated or unsaturated ring. X1 through X3 each independently represent a chalcogen element. L1 and L2 each independently represent a ligand. Herein, L1 and L2 can be coupled to form a saturated or unsaturated ring.) |
