METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER RECORDING MEDIUM

摘要

A method for manufacturing a semiconductor device in which etching is performed on a substrate having a photoresist layer and a multilayer film in which a first film and a second film are alternately stacked, and a step-shaped structure is formed; wherein: a first step for plasma-etching the first film using the photoresist layer as a mask; a second step for using a plasma treatment device equipped with a lower electrode and an upper electrode including at least a silicon member, plasmatizing a treatment gas containing argon gas and hydrogen gas using high-frequency power applied to the lower electrode in a state in which a negative DC voltage is applied to the upper electrode, and exposing the photoresist layer formed on the substrate to the plasma; a third step for trimming the photoresist layer; and a fourth step for plasma-etching the second film after the third step are repeatedly performed.