DEFECT DETECTION METHOD, DEFECT DETECTION DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

Provided is a defect detection method making it possible to detect a defect in a semiconductor substrate even when the amount of electric current needed to detect the defect is limited. An infrared image indicative of the temperature distribution in a semiconductor substrate when a voltage is applied to a plurality of wires is acquired; the position of a semiconductor element where heat is generated is identified; and, from previously established information on the electrical connection relationships between the positions of a plurality of semiconductor elements and the plurality of wires, it is determined that any of the plurality of wires that is electrically connected to the semiconductor element where heat was generated is a defective wire having a short-circuit.