发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device reduces power consumed in the semiconductor memory device by arranging a circuit performing a data inversion function around a memory cell. CONSTITUTION: A cell/core region (CELL/CORE) includes multiple memory banks (BANK) and multiple memory cell arrays (101). A data terminal to which an input data signal is inputted is placed on a peripheral region (PERI). An inversion circuit outputs the input data signal which is inverted or non-inverted in response to an inversion control signal indicating the inversion state of the input data signal. The multiple memory banks have one inversion circuit, respectively.
申请公布号 KR20130098681(A) 申请公布日期 2013.09.05
申请号 KR20120020397 申请日期 2012.02.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SOHN, KYO MIN
分类号 G11C7/10;G11C7/22 主分类号 G11C7/10
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