| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has good electrical characteristic though having a minute structure and in which a capacitative element is efficiently formed.SOLUTION: In a top gate transistor (also called stagger transistor) which uses an oxide semiconductor film as an active layer, a source electrode and a drain electrode of the transistor are formed as a two-layer structure (first electrode film and second electrode film). Then, a capacitative element is formed by using the same material and the same process as those of the first electrode film, a gate insulation film and a gate electrode. Accordingly, the capacitative element can be efficiently formed because the transistor and the capacitative element can be formed in the same process. Further, the second electrode film is connected on the oxide semiconductor film between the first electrode film and a channel formation region of the transistor. Accordingly, electrical characteristic of a semiconductor device can be good because resistance between the source electrode and the drain electrode can be reduced. |
