发明名称 |
METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER |
摘要 |
A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.
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申请公布号 |
US2013228220(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201113820537 |
申请日期 |
2011.09.02 |
申请人 |
SCHUM BERTHOLD;VAAS KNUT;LACHOWICZ AGATA;HERMERT NORMAN;SCHOTT SOLAR AG |
发明人 |
SCHUM BERTHOLD;VAAS KNUT;LACHOWICZ AGATA;HERMERT NORMAN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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