| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser which achieves a high output in a fundamental transverse mode and long life.SOLUTION: A surface emitting semiconductor laser 10 comprises a substrate 100, an n-type lower DBR 102, an active region 104 and a p-type upper DBR 106. The lower DBR 102 includes a first oxidation constriction layer 110 for confining light generated in the active region. The upper DBR 106 includes a second oxidation constriction layer 120 for constricting current flowing in the active region 104; and a reflectance adjustment member 150 which has reflectance smaller in a peripheral part than in a central part, and is formed at a light emission port. When assuming that a diameter of a non-oxidation region 110B of the first oxidation constriction layer 110 is Do1, a width of a non-oxidation region 120B of the second oxidation constriction layer 120 is Do2 and a diameter of the central part of the reflectance adjustment member 150 is Dn, a relation is represented as Do1<D02 and Dn<Do2. |
